Transport Properties of Disordered Graphene Layers

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Abnormal Electronic Transport in Disordered Graphene Nanoribbon

We investigate the conductivity σ of graphene nanoribbons with zigzag edges as a function of Fermi energy EF in the presence of the impurities with different potential range. The dependence of σ(EF ) displays four different types of behavior, classified to different regimes of length scales decided by the impurity potential range and its density. Particularly, low density of long range impuriti...

متن کامل

Electron transport in disordered graphene nanoribbons.

We report an electron transport study of lithographically fabricated graphene nanoribbons (GNRs) of various widths and lengths. At the charge neutrality point, a length-independent transport gap forms whose size is inversely proportional to the GNR width. In this gap, electrons are localized, and charge transport exhibits a transition between thermally activated behavior at higher temperatures ...

متن کامل

Electronic properties of disordered graphene antidot lattices

Shengjun Yuan,1,* Rafael Roldán,2,† Antti-Pekka Jauho,3 and M. I. Katsnelson1 1Radboud University of Nijmegen, Institute for Molecules and Materials, Heijendaalseweg 135, 6525 AJ Nijmegen, The Netherlands 2Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain 3Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Microand Nanotechnology, Technical ...

متن کامل

Transport properties of rippled graphene.

The exceptionally high mobility of carriers in graphene is one of its defining characteristics, especially in view of potential applications. Therefore it is of both practical and fundamental importance to understand the mechanisms responsible for limiting the values of the mobility. The aim of the paper is to study theoretically one such mechanism, i.e. scattering on ripples. The transport pro...

متن کامل

Non-ohmic behavior of carrier transport in highly disordered graphene.

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By applying a high source-drain voltage, Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing Vsd, a crossover from the linear I-Vsd regime to the non-linear one, and eventually to activationless-hopping transport occurs. In the activationless-hopp...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Acta Physica Polonica A

سال: 2009

ISSN: 0587-4246,1898-794X

DOI: 10.12693/aphyspola.116.838